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Power Transistors
2SB0936 (2SB936), 2SB0936A (2SB936A)
Silicon PNP epitaxial planar type
For low-voltage switching ■ Features
• Low collector-emitter saturation voltage VCE(sat) • High-speed switching • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.
10.0±0.3 1.5±0.1
Unit: mm
8.5±0.2 6.0±0.2 3.4±0.3 1.0±0.1
4.4±0.5
Parameter Collector-base voltage (Emitter open) 2SB0936 2SB0936A
Symbol VCBO VCEO VEBO IC ICP PC Ta = 25°C Tj Tstg
Rating −40 −50 −20 −40 −5 −10 −20 40 1.3 150 −55 to +150
Unit V
2.0±0.5
■ Absolute Maximum Ratings TC = 25°C
Collector-emitter voltage 2SB0936 (Base open) 2SB0936A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation
V
(6.
B936 Datasheet
