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Transistor
2SB774
Silicon PNP epitaxial planer type
For low-frequency amplification
s Features
q High emitter to base voltage VEBO. q Protective diodes and resistances between emitter and base can
be omitted.
5.1±0.2
5.0±0.2
Unit: mm 4.0±0.2
13.5±0.5
s Absolute Maximum Ratings (Ta=25˚C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings –30 –25 –15 –200 –100 400 150
–55 ~ +150
Unit V V V mA mA mW ˚C ˚C
+0.2
0.45 –0.1 1.27
+0.2
0.45 –0.1 1.27
2.3±0.2
123 2.54±0.
B774 Datasheet
