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2SK620 - N-Channel MOSFET

Features

  • q High-speed switching q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 0.65±0.15 1.5.
  • 0.05 +0.25 0.95 2.9.
  • 0.05 1 1.9±0.2 +0.2 0.95 3 0.4.
  • 0.05 +0.1 2 1.45 +0.2 1.1.
  • 0.1 s Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDSS VG.

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Datasheet Details

Part number 2SK620
Manufacturer Panasonic
File Size 36.27 KB
Description N-Channel MOSFET
Datasheet download datasheet 2SK620 Datasheet

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Full PDF Text Transcription

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Silicon MOS FETs (Small Signal) 2SK620 Silicon N-Channel MOS FET For switching 2.8 –0.3 +0.2 unit: mm 0.65±0.15 s Features q High-speed switching q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 0.65±0.15 1.5 –0.05 +0.25 0.95 2.9 –0.05 1 1.9±0.2 +0.2 0.95 3 0.4 –0.05 +0.1 2 1.45 +0.2 1.1 –0.
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