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Silicon MOSFETs (Small Signal)
2SK3539
Silicon N-channel MOSFET
Unit: mm
(0.425)
For switching ■ Features
• High-speed switching • Wide frequency band • Gate protection diode built-in
0.3+0.1 –0.0 3
0.15+0.10 –0.05
1.25±0.10
2.1±0.1 5˚
1
2
(0.65) (0.65) 1.3±0.1
■ Absolute Maximum Ratings Ta = 25°C
Parameter Drain-source voltage Gate-source voltage (Drain open) Drain current Peak drain current Power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Rating 50 ±7 100 200 150 150 −55 to +150 Unit V V mA mA mW °C °C
10˚
2.0±0.2
0.9±0.1
0.9+0.2 –0.
2SK3539 Datasheet
