2SK2380 - Silicon N-Channel MOSFET

Panasonic

Key Features

V mS pF pF pF 1 Silicon Junction FETs (Small Signal) PD  Ta 150 240 Ta=25˚C 125 200 200 VGS=0.4V 2SK2380 ID  VDS 240 VDS=10V ID  VGS Allowable power dissipation PD (mW) Drain current ID (µA) 100 160 Drain current ID (µA) 160 75 120 0.2V 0V 120 50 80.
0.2V.
0.4V 80 25 40.
0.6V 40 Ta=75˚C.
25˚C.
0.8.
0.4 25˚C 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0.
1.2 0 0.4 Ambient temperature Ta (˚C) Drain.

2SK2380 silicon n-channel mosfet by Panasonic - Datasheet Preview

Datasheet Details

Part number	2SK2380
Manufacturer	Panasonic
File Size	31.69 KB
Description	Silicon N-Channel MOSFET
Datasheet	2SK2380 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2SK2381	Silicon N-Channel MOSFET	Toshiba Semiconductor
2SK2381	N-Channel MOSFET	VBsemi
2SK2382	N-Channel MOSFET	Toshiba Semiconductor
2SK2385	N-Channel MOSFET	Toshiba Semiconductor
2SK2386	N-Channel MOSFET Transistor	Inchange Semiconductor

Other Datasheets by Panasonic

Part Number	Description
2SK2383	Silicon N-Channel MOSFET
2SK2339	Silicon N-Channel Power F-MOS
2SK2340	Silicon N-Channel Power MOSFET
2SK2374	N-Channel MOSFET
2SK2375	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Silicon Junction FETs (Small Signal) 2SK2380 Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor 0.4 unit: mm 1.6±0.15 0.8±0.1 0.4 q Low gate to source leakage current, IGSS q Small capacitance of Ciss, Coss, Crss q SS-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 1.6±0.1 1.0±0.1 0.5 1 0.5 3 2 0.45±0.1 0.3 0.75±0.