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2SD638 - Silicon NPN Transistor

Download the 2SD638 datasheet PDF. This datasheet also covers the 2SD0638 variant, as both devices belong to the same silicon npn transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 9 R 0.7 1 www. DataSheet4U. net 2SD0638 PC  Ta 800 800 700 IC  VCE Ta = 25°C IB = 10 mA 9 mA 8 mA 7 mA 6 mA 5 mA 4 mA 400 300 200 100 0 3 mA 2 mA 1 mA 800 700 IC  I B VCE = 10 V Ta = 25°C Collector power dissipation PC (mW) 700 Collector current IC (mA) 600 500 400 300 200 100 0 600 500 Collector current IC (mA) 600 500 400 300 200 100 0 0 20 40 60 80 100 120 140 160 0 4 8 12 16 20 0 2 4 6 8 10 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Base cu.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SD0638_PanasonicSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2SD638
Manufacturer Panasonic
File Size 100.31 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD638 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.net Transistors 2SD0638 (2SD638) Silicon NPN epitaxial planar type For medium-power general amplification Complementary to 2SB0643 (2SB643) (0.4) (1.5) (1.5) Unit: mm 6.9±0.1 2.5±0.1 (1.0) 2.0±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature * 1.0±0.1 (0.85) 2.4±0.2 0.45±0.05 VCBO VCEO VEBO IC ICP PC Tj Tstg 30 25 7 0.5 1 600 150 −55 to +150 V V V A A mW °C °C 3 (2.5) 2 (2.5) 1 1.25±0.05 Symbol Rating Unit 0.55±0.