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Transistor
2SD1823
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
s Features
q q q q q
2.1±0.1 0.425 1.25±0.1 0.425
High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
0.65
1
2.0±0.2
1.3±0.1
0.65
3
2
0.2
(Ta=25˚C)
Ratings 50 40 15 100 50 150 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C
0.7±0.
2SD1823 Datasheet
