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2SD1776 - Silicon NPN Transistor

Key Features

  • q q 0.7±0.1 Unit: mm 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2.
  • 0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2 q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1776 2SD1776A 2SD1776 Symbol VCBO VCEO VEBO ICP IC IB Ta=25°C PC Tj Tstg (TC=25˚C) Ratings 80 100 60 80 6 4 2 0.5 25 2 150.
  • 55 to +150 Unit V 16.7±0.3 14.0±0.5 emitter voltage 2SD1776A Emitter to base voltage Peak collector current Collector current Base current.

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Power Transistors 2SD1776, 2SD1776A Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio s Features q q 0.7±0.1 Unit: mm 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2 q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1776 2SD1776A 2SD1776 Symbol VCBO VCEO VEBO ICP IC IB Ta=25°C PC Tj Tstg (TC=25˚C) Ratings 80 100 60 80 6 4 2 0.5 25 2 150 –55 to +150 Unit V 16.7±0.3 14.0±0.5 emitter voltage 2SD1776A Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Junction temperature Storage temperature V V A A A W ˚C ˚C Solder Dip 4.0 7.5±0.