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2SD1755 - Silicon NPN epitaxial planar type Transistor

Key Features

  • 1.1±0.1 0.75±0.1 0.85±0.1 0.4±0.1 2.3±0.2 4.6±0.4 1 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg 1:Base 2:Collector 3:Emitter I Type Package 3.5±0.2 2.0±0.2 7.0±0.3 Unit: mm 0 to 0.15 Ratings 100 60 15 12 6 3 15 1.3 150.
  • 55 to.

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Datasheet Details

Part number 2SD1755
Manufacturer Panasonic
File Size 57.91 KB
Description Silicon NPN epitaxial planar type Transistor
Datasheet download datasheet 2SD1755 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power Transistors 2SD1755 Silicon NPN epitaxial planar type For power amplification with high forward current transfer ratio 7.2±0.3 0.8±0.2 7.0±0.3 3.0±0.2 3.5±0.2 Unit: mm 1.0±0.2 q q q High forward current transfer ratio hFE which has satisfactory linearity High emitter to base voltage VEBO I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) 10.0 –0. +0.3 s Features 1.1±0.1 0.75±0.1 0.85±0.1 0.4±0.1 2.3±0.2 4.6±0.