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2SD1277A - Silicon PNP Transistor

Key Features

  • q q q 4.0 High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings.
  • 60.
  • 80.
  • 60.
  • 80.
  • 7.
  • 12.
  • 8 45 2 150.
  • 55 to +150 Unit V 16.7±0.3 φ3.1±0.1 1.4±0.1 1.3±0.2 14.0±0.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB951 2SB951A 2SB951 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 0.8±0.1 0.5 +0.2.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power Transistors 2SB951, 2SB951A Silicon PNP epitaxial planar type Darlington 0.7±0.1 For midium-speed switching Complementary to 2SD1277 and 2SD1277A 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 4.2±0.2 Unit: mm 7.5±0.2 s Features q q q 4.0 High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings –60 –80 –60 –80 –7 –12 –8 45 2 150 –55 to +150 Unit V 16.7±0.3 φ3.1±0.1 1.4±0.1 1.3±0.2 14.0±0.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB951 2SB951A 2SB951 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.