Suitable for high-density mounting and downsizing of the equipment for Ultraminiature leadless package 0.6 mm × 1.0 mm (height 0.39 mm)
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Unit: mm
1 1.00±0.05
0.60±0.05
3
2
0.39+0.01.
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector ope.
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Transistors
2SC5839
Silicon NPN epitaxial planar type
For low-voltage high-frequency amplification ■ Features
• High transition frequency fT • Suitable for high-density mounting and downsizing of the equipment for Ultraminiature leadless package 0.6 mm × 1.0 mm (height 0.39 mm)
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Unit: mm
1 1.00±0.05
0.60±0.05
3
2
0.39+0.01 −0.03
0.15±0.05 0.05±0.03 0.35±0.01
0.25±0.05
0.50±0.05
0.25±0.05 1
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 9 6 2 30 100 125 −55 to +125 Unit V V V mA mW °C °C
3
0.65±0.01
2 0.05±0.