q q q q
High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE (TC=25˚C)
Ratings 800 800 500 8 25 12 6 150 3.5 150.
55 to +150 Unit V V V V A A A W ˚C ˚C
26.0±0.5
10.0
1.5
2.0
4.0
1.5
20.0±0.5 2.5
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collecto.
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Power Transistors
2SC3976
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
20.0±0.5
Unit: mm
φ 3.3±0.2 5.0±0.3 3.0
6.0
s Features
q q q q
High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE (TC=25˚C)
Ratings 800 800 500 8 25 12 6 150 3.5 150 –55 to +150 Unit V V V V A A A W ˚C ˚C
26.0±0.5
10.0
1.5
2.0
4.0
1.5
20.0±0.5 2.5
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg
2.0±0.
2SC3976 Datasheet
