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2SB1693 - Silicon PNP Transistor

Features

  • s.
  • Large collector current IC.
  • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing 1 0.40+0.10.
  • 0.05 3 1.50+0.25.
  • 0.05 2.8+0.2.
  • 0.3 Unit: mm 0.16+0.10.
  • 0.06 2 (0.65) (0.95) (0.95) 1.9±0.1 2.90+0.20.
  • 0.05 10˚.
  • Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Col.

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Full PDF Text Transcription

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Transistors 2SB1693 Silicon PNP epitaxial planar type For general amplification ■ Features • Large collector current IC • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing 1 0.40+0.10 –0.05 3 1.50+0.25 –0.05 2.8+0.2 –0.3 Unit: mm 0.16+0.10 –0.06 2 (0.65) (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 10˚ ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −40 −20 −15 − 0.5 −1 200 150 −55 to +150 Unit V V V A A mW °C °C 1.1+0.2 –0.1 1.1+0.3 –0.
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