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2SB1645 - Silicon PNP Transistor

Key Features

  • Satisfactory forward current transfer ratio hFE characteristics.
  • Wide area of safe operation (ASO).
  • Optimum for the output stage of a HiFi audio amplifier (4.5) (2.0) I Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation TC = 25°C Ta = 25°C Tj Tstg Symbol VCBO VCEO VEBO ICP IC PC Rating.
  • 160.
  • 160.
  • 5.

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Datasheet Details

Part number 2SB1645
Manufacturer Panasonic
File Size 54.70 KB
Description Silicon PNP Transistor
Datasheet download datasheet 2SB1645 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power Transistors 2SB1645 Silicon PNP triple diffusion planar type Darlington Unit: mm For power amplification (10.0) 15.5±0.5 φ 3.2±0.1 5° 3.0±0.3 5° 26.5±0.5 (23.4) 5° 5° 5° 0.7±0.1 I Features • Satisfactory forward current transfer ratio hFE characteristics • Wide area of safe operation (ASO) • Optimum for the output stage of a HiFi audio amplifier (4.5) (2.0) I Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation TC = 25°C Ta = 25°C Tj Tstg Symbol VCBO VCEO VEBO ICP IC PC Rating −160 −160 −5 −15 −8 100 3 150 −55 to +150 °C °C Unit V V V A A W 18.6±0.5 (2.0) Solder Dip (4.0) 2.0±0.2 1.1±0.1 5.45±0.3 10.9±0.5 3.3±0.3 5° 1 2 3 5.