Datasheet4U Logo Datasheet4U.com

PJF5N60 - 600V N-Channel Enhancement Mode MOSFET

Features

  • 5A , 600V, RDS(ON)=2.1Ω@VGS=10V, ID=2.5A.
  • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives TO-220AB / ITO-220AB TO-220AB ITO-220AB 1 2 G 3 D S 1 2 G 3 D S.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PJF04N70L N-Channel MOSFETS Potens semiconductor
PJF10N65M 650V N-Channel Enhancement Mode MOSFET PAN JIT
PJF11N65D N-Channel MOSFETS Potens semiconductor
PJF15N65D N-Channel MOSFETS Potens semiconductor
PJF17N80T N-Channel MOSFETS Potens semiconductor

Other Datasheets by PanJit Semiconductor

Part Number Description
PJF5NA50 500V N-Channel MOSFET
PJF5NA80 800V N-Channel MOSFET
PJF10N60 600V N-Channel Enhancement Mode MOSFET
PJF10N65 650V N-Channel Enhancement Mode MOSFET
PJF12N65 650V N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription

Click to expand full text
PJP5N60 / PJF5N60 600V N-Channel Enhancement Mode MOSFET FEATURES • 5A , 600V, RDS(ON)=2.1Ω@VGS=10V, ID=2.
Published: |