Datasheet4U Logo Datasheet4U.com

PJD80N06 - 60V N-Channel Enhancement Mode MOSFET

Features

  • RDS(ON) , VGS@10V, ID@20A.

📥 Download Datasheet

📁 Similar Datasheet

  • PJD882 - NPN Epitaxial Silicon Transistor (ETC)
  • PJD882S - NPN Epitaxial Silicon Transistor (ETC)
  • PJD04N60D - N-Channel MOSFETS (Potens semiconductor)
  • PJD04N70L - N-Channel MOSFETS (Potens semiconductor)
  • PJD100P04-AU - 40V P-Channel Enhancement Mode MOSFET (PAN JIT)
  • PJD11N60D - N-Channel MOSFETS (Potens semiconductor)
  • PJD11N65D - N-Channel MOSFETS (Potens semiconductor)
  • PJD14P06A-AU - 6V P-Channel MOSFET (PAN JIT)
  • PJD45N03 - 30V N-Channel Enhancement Mode MOSFET (PAN JIT)
  • PJD50N10AL-AU - 100V N-Channel MOSFET (PAN JIT)
Other Datasheets by Pan Jit International
  • PJD8NA50 - 500V N-Channel MOSFET
  • PJD06N03 - N-Channel Enhancement Mode MOSFET
  • PJD09N03 - N-Channel Enhancement Mode MOSFET
  • PJD10P10A - 100V P-Channel Enhancement Mode MOSFET
  • PJD14P06-AU - 60V P-Channel Enhancement Mode MOSFET
  • PJD14P06A - 60V P-Channel Enhancement Mode MOSFET
  • PJD14P10A - 100V P-Channel Enhancement Mode MOSFET
  • PJD15N06L - N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription

Click to expand full text
PPJD80N06 60V N-Channel Enhancement Mode MOSFET Voltage 60 V Current 80 A Features  RDS(ON) , VGS@10V, ID@20A<7mΩ  High switching speed  Improved dv/dt capability  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case : TO-252 Package  Terminals : Solderable per MIL-STD-750, Method 2026  Approx. Weight : 0.0104 ounces, 0.
Published: |