Datasheet4U Logo Datasheet4U.com

PJA3449 - P-Channel Enhancement Mode MOSFET

Features

  • RDS(ON) , VGS@-10V, ID@-2.2A.

📥 Download Datasheet

📁 Similar Datasheet

  • PJA3402-AU - 30V N-Channel Enhancement Mode MOSFET (PAN JIT)
  • PJA3415-AU - 20V P-Channel Enhancement Mode MOSFET (PANJIT)
  • PJA3471 - 100V P-Channel Enhancement Mode MOSFET (PAN JIT)
  • PJA3476-AU - 100V N-Channel Enhancement Mode MOSFET (PAN JIT)
  • PJA45N02 - 20V N-Channel Enhancement Mode MOSFET (Pan Jit)
  • PJA55P03 - 30V P-Channel MOSFET (Pan Jit)
  • PJA63P02 - 20V P-Channel MOSFET (Pan Jit)
  • PJA65P03 - 30V P-Channel Enhancement Mode MOSFET (PanJit)
  • PJA733 - PNP Epitaxial Silicon Transistor (Promax)
  • PJA87P03 - 30V P-Channel MOSFET (Pan Jit)
Other Datasheets by Pan Jit International
  • PJA3440 - N-Channel Enhancement Mode MOSFET
  • PJA3441 - P-Channel Enhancement Mode MOSFET
  • PJA3448 - N-Channel Enhancement Mode MOSFET
  • PJA3400 - N-Channel Enhancement Mode MOSFET
  • PJA3401 - P-Channel Enhancement Mode MOSFET
  • PJA3402 - N-Channel Enhancement Mode MOSFET
  • PJA3403 - P-Channel Enhancement Mode MOSFET
  • PJA3404 - N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription

Click to expand full text
PPJA3449 40V P-Channel Enhancement Mode MOSFET Voltage -40 V Current -2.2A Features  RDS(ON) , VGS@-10V, ID@-2.2A<160mΩ  RDS(ON) , VGS@-4.5V, ID@-1.5A<230mΩ  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc  Lead free in compliance with EU RoHS 2011/65/EU directive  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case : SOT-23 Package  Terminals : Solderable per MIL-STD-750, Method 2026  Approx. Weight : 0.0003 ounces, 0.
Published: |