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PJA3416AE - N-Channel Enhancement Mode MOSFET

Datasheet Summary

Features

  • RDS(ON) , VGS@4.5V, ID@6.5A.

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Datasheet Details

Part number PJA3416AE
Manufacturer Pan Jit International
File Size 302.11 KB
Description N-Channel Enhancement Mode MOSFET
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PPJA3416AE 20V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 20 V Current 6.5A SOT-23 Features  RDS(ON) , VGS@4.5V, ID@6.5A<22mΩ  RDS(ON) , VGS@2.5V, ID@5.5A<26mΩ  RDS(ON) , VGS@1.8V, ID@5.0A<34mΩ  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.  ESD Protected 2KV HBM  Lead free in compliance with EU RoHS 2011/65/EU directive  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: SOT-23 Package  Terminals : Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.0003 ounces, 0.
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