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PJ4N3KDW - 30V Dual N-Channel MOSFET

Features

  • RDS(ON), VGS@2.5V,IDS@1mA=7.0Ω.
  • RDS(ON), VGS@4.0V,IDS@10mA=5.0Ω.
  • Advanced Trench Process Technology.
  • High Density Cell Design For Ultra Low On-Resistance.
  • The MOSFET elements are independent,eliminating interference.
  • Mounting cost and area can be cut in half.
  • Very Low Leakage Current In Off Condition.
  • Specially Designed for Battery Operated Systems,Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, e.

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Full PDF Text Transcription

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PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@2.5V,IDS@1mA=7.0Ω • RDS(ON), VGS@4.0V,IDS@10mA=5.0Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • The MOSFET elements are independent,eliminating interference • Mounting cost and area can be cut in half • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems,Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. • Low voltage drive (2.
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