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PJ04N03D - 25V N-Channel MOSFET

Features

  • RDS(ON),VGS@10V,I DS@30A=4mΩ.
  • RDS(ON),VGS@5.0V,I DS@24A=6mΩ.
  • Advanced trench process technology.
  • High Density Cell Design For Uitra Low On-Resistance.
  • Specially Designed for DC/DC Converters and Motor Drivers.
  • Fully Characterized Avalanche Voltage and Current.
  • In compliance with EU RoHS 2002/95/EC directives G S D TO-252.

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PJ04N03D 25V N-Channel Enhancement Mode Field Effect Transistor FEATURES • RDS(ON),VGS@10V,I DS@30A=4mΩ • RDS(ON),VGS@5.0V,I DS@24A=6mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers • Fully Characterized Avalanche Voltage and Current • In compliance with EU RoHS 2002/95/EC directives G S D TO-252 MECHANICALDATA • Case : TO-252 Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026 • Marking : 04N03D G D S Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PARAMETER Drain-Source Voltage Gate-Source Voltage Continous Drain Current Pulsed Drain Current (1) Avalanche Energy L=0.
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