AD100-8-TO52-S1 - Photodiode

General Description

AD100-8-TO52-S1 Order # 06-035 OMPLIANT ACTIVE AREA: 0.00785 mm 2 (100 µm DIA) Ø 5.40 Ø 3.00 116° VIEWING Ø 4.70 ANGLE PIN 1 CATHODE Ø0.46 3 PL Ø 2.54 PIN CIRCLE FRONTSIDE VIEW 2.70 3.60 ±1 12.7 3 PL PIN 4 CASE PIN 3 ANODE BACKSIDE VIEW RESPONSIVITY (A/W) RoH

Key Features

∅ 100 µm active area.
High gain at low bias voltage.
Fast rise time.
Low capacitance.

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AD100-8-TO52-S1 photodiode by Pacific Silicon Sensor - Datasheet Preview

Datasheet Details

Part number	AD100-8-TO52-S1
Manufacturer	Pacific Silicon Sensor
File Size	229.03 KB
Description	Photodiode
Datasheet	AD100-8-TO52-S1 Datasheet

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Pacific Silicon Sensor Series 8 Data Sheet Part Description AD100-8-TO52-S1 Order # 06-035 OMPLIANT ACTIVE AREA: 0.00785 mm 2 (100 µm DIA) Ø 5.40 Ø 3.00 116° VIEWING Ø 4.70 ANGLE PIN 1 CATHODE Ø0.46 3 PL Ø 2.54 PIN CIRCLE FRONTSIDE VIEW 2.70 3.60 ±1 12.7 3 PL PIN 4 CASE PIN 3 ANODE BACKSIDE VIEW RESPONSIVITY (A/W) RoH FEATURES • ∅ 100 µm active area • High gain at low bias voltage • Fast rise time • Low capacitance DESCRIPTION 0.00785 mm2 High Speed, High Gain Avalanche Photodiode with N on P construction. Hermetically packaged in a TO-52-S1 with a clear borosilicate glass window cap.