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PL2301GD
PULAN TECHNOLOGY CO., LIMITED
P-Channel High Density Trench MOSFET
PRODUCT SUMMARY
VDSS
ID RDS(on) (m-ohm) Max
-20V
-2.2 125 @ VGS= 4.5V -1.4 170 @ VGS= 2.5V
FEATURES
●Super high dense cell trench design for low RDS(on). ●Rugged and reliable. ●Surface Mount package.
SOT-23-3
D
D
S G
G S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS -20
V
Gate-Source Voltage
VGS ± 8
V
Drain Current-Continuousa@ TA= 25 °C b
-Pulse
Drain-Source Diode Forward Current a
Maximum Power Dissipationa
TA=25°C TA=75°C
Operating Junction and Storage Temperature Range
ID IDM IS PD
TJ,TSTG
-2.2
-6
-0.75 1.25 0.
PL2301GD Datasheet
