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PT5616 - 3-Phase 600V Gate Driver

This page provides the datasheet information for the PT5616, a member of the PT5616A 3-Phase 600V Gate Driver family.

Datasheet Summary

Description

The devices are full bridge drivers to control power devices like MOS-transistors or IGBTs in 3-phase systems with a maximum blocking voltage of +600 V.

The six independent drivers are controlled at the low-side using CMOS and LSTTL compatible signals, down to 3.3V logic.

Features

  • Drives up to six IGBT/MOSFET power devices.
  • All high side channels fully operate up to +600V.
  • Gate drive supplies up to 18 V per channel.
  • Under-voltage lockout for all channels.
  • Over-current protection.
  • Flexible over-temperature shutdown input.
  • Advanced input filter.
  • Built-in dead-time protection.
  • Shoot-through (cross-conduction) protection.
  • Independent Enable/disable input and fault reporting.
  • Shutdown all switches during error conditions.

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Datasheet preview – PT5616

Datasheet Details

Part number PT5616
Manufacturer PTC
File Size 344.52 KB
Description 3-Phase 600V Gate Driver
Datasheet download datasheet PT5616 Datasheet
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Full PDF Text Transcription

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DESCRIPTION The devices are full bridge drivers to control power devices like MOS-transistors or IGBTs in 3-phase systems with a maximum blocking voltage of +600 V. The six independent drivers are controlled at the low-side using CMOS and LSTTL compatible signals, down to 3.3V logic. The device includes an under -voltage detection unit with hysteresis characteristic and over -current detection. The over -current level is adjusted by choosing the resistor value and the threshold level at pin ITRIP. Both error conditions (under-voltage and over-current) lead to a definite shut down of all six switches. An error signal is provided at the FAULT open drain output pin. The blocking time after over -current can be adjusted with an RC-network at pin RCIN. Therefore, the resistor RRCIN is optional.
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