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PESDR0521P1A - 1-Line Ultra Low Capacitance Bi-directional TVS Diode

This page provides the datasheet information for the PESDR0521P1A, a member of the PESDR0521P1A-PN 1-Line Ultra Low Capacitance Bi-directional TVS Diode family.

Description

The PESDR0521P1A is a bi-directional TVS diode, utilizing leading monolithic silicon technology to provide fast response time and low ESD clamping voltage, making this device an ideal solution for protecting voltage sensitive high--speed data lines.

Features

  • Ultra small package: 1.0x0.6x0.5mm.
  • Ultra low capacitance: 0.26pF typical.
  • Ultra low leakage: nA level.
  • Low operating voltage: 5 V.
  • Low clamping voltage.
  • 2-pin leadless package.
  • Complies with following standards:.

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Datasheet preview – PESDR0521P1A

Datasheet Details

Part number PESDR0521P1A
Manufacturer PN-Silicon
File Size 308.83 KB
Description 1-Line Ultra Low Capacitance Bi-directional TVS Diode
Datasheet download datasheet PESDR0521P1A Datasheet
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Full PDF Text Transcription

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PESDR0521P1A 1-Line Ultra Low Capacitance Bi-directional TVS Diode Description The PESDR0521P1A is a bi-directional TVS diode, utilizing leading monolithic silicon technology to provide fast response time and low ESD clamping voltage, making this device an ideal solution for protecting voltage sensitive high--speed data lines. The PESDR0521P1A has an ultra-low capacitance with a typical value at 0.3pF, and complies with the IEC 6100 0-4-2 (ESD) standard with ±15kV air and ±8Kv contact discharge. It is assembled into an ultra-small 1.0x0.6x 0.5mm lead-free DFN package. The small size, ultra-low capacitance and high ESD surge protection make PESDR0521P1A an ideal choice to protect cellphone, digital video interfaces and other high speed ports. Features  Ultra small package: 1.0x0.6x0.
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