• Part: PTP11N45
  • Description: 430V N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: PIP
  • Size: 837.94 KB
Download PTP11N45 Datasheet PDF
PIP
PTP11N45
Features - Proprietary New Planar Technology - RDS(ON),typ.=0.39 Ω@VGS=10V - Low Gate Charge Minimize Switching Loss - Fast Recovery Body Diode BVDSS 430V RDS(ON),typ. 0.39Ω ID 11A Applications - Ballast and Lighting - DC-AC Inverter - Other Applications G DS Ordering Information Part Number Package TO-220 Brand TO-220 Package No to Scale Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGSS ID ID @ Tc =100℃ IDM EAS dv/dt TL TPAK Parameter Drain-to-Source Voltage[1] Gate-to-Source Voltage Continuous Drain Current Continuous Drain Current @ Tc=100℃ Pulsed Drain Current at VGS=10V[2] Single Pulse Avalanche Energy Peak Diode Recovery dv/dt[3] Power Dissipation Derating Factor above 25℃ Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds, Package Body for 10 seconds 430 ±30 11 Figure 3 Figure 6 500 5.0 140 1.12 300 260 Unit V A m J V/ns W W/℃ ℃ TJ& TSTG Operating and Storage...