PTP11N45
Features
- Proprietary New Planar Technology
- RDS(ON),typ.=0.39 Ω@VGS=10V
- Low Gate Charge Minimize Switching Loss
- Fast Recovery Body Diode
BVDSS 430V
RDS(ON),typ. 0.39Ω
ID 11A
Applications
- Ballast and Lighting
- DC-AC Inverter
- Other Applications
G DS
Ordering Information
Part Number Package
TO-220
Brand
TO-220 Package No to Scale
Absolute Maximum Ratings
TC=25℃ unless otherwise specified
Symbol
VDSS VGSS ID ID @ Tc =100℃ IDM EAS dv/dt
TL TPAK
Parameter
Drain-to-Source Voltage[1]
Gate-to-Source Voltage
Continuous Drain Current Continuous Drain Current @ Tc=100℃ Pulsed Drain Current at VGS=10V[2] Single Pulse Avalanche Energy Peak Diode Recovery dv/dt[3]
Power Dissipation Derating Factor above 25℃ Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds, Package Body for 10 seconds
430 ±30 11 Figure 3 Figure 6 500 5.0 140 1.12
300 260
Unit V
A m J V/ns
W W/℃
℃
TJ& TSTG
Operating and Storage...