Datasheet4U Logo Datasheet4U.com

J30A09C - Telecom Transformer

Description

Unit 5, Oxonian Park, Langford Locks, Kidlington, Oxfordshire.

📥 Download Datasheet

Datasheet Details

Part number J30A09C
Manufacturer Oxford
File Size 107.06 KB
Description Telecom Transformer
Datasheet download datasheet J30A09C Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
J300 N-Channel JFET National Semiconductor
J300 JFET HIGH FREQUENCY AMPLIFIER Motorola
J300 n-channel JFET Siliconix
J3006G21D PULSEJACKTM Surface Mount 1x1 PULSE
J3011G21D PULSEJACKTM Surface Mount 1x1 PULSE

Other Datasheets by Oxford

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Pin 1 www.oep.co.uk YY WW 4 Secondary 1 5 2 25.5 J30A09C Label YY WW = date code Primary 6 Secondary 2 7 3 30 36 8 Secondary 3 10 9 Shield / Lid Screen 1 1 5 20.0 10 6 5.0 Electrical specification: Applications: Ratio:1:1:1:1 Microphone input Source impedance (windings in series): 600W Max. input signal +22dBu Frequency range @ 0dBm: 10Hz - 50kHz: +/-0.44dB Construction: 4 section winding for improved de-coupling Provides galvanic isolation 50Hz - 50kHz: +/-0.12dB THD @ 50Hz: 0.01% (0dBm) Ground loop isolation Common mode rejection ratio: >60dB @ 10kHz Mu-metal core for low distortion Primary DC resistance: 83W +/- 15% Secondary DC resistance (per winding): 89W +/- 15% Nominal inductance: 4H @ 1kHz, 0.10V Leakage inductance (Secondaries S/C) @ 1kHz, 0.
Published: |