FQP5N50
Description
Product Summary
The FQP5N50 & FQPF5N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V)
100% UIS Tested 100% Rg Tested
600V@150℃ 5A < 1.5Ω
TO-220
Top View
TO-220F
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
FQPF5N50
Drain-Source Voltage
VDS 500
Gate-Source Voltage
VGS ±30
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
Peak diode recovery dv/dt
IDM IAR EAR EAS dv/dt
5 5- 3.3 3.3-
18 2.6 101 203
TC=25°C Power Dissipation B Derate above 25o C
104 35.0 0.8 0.3
Junction and...
