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OSG65R050HT3ZF - N-Channel Power MOSFET

General Description

The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge.

It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.

Key Features

  • Low RDS(ON) & FOM.
  • Extremely low switching loss.
  • Excellent stability and uniformity.

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Datasheet Details

Part number OSG65R050HT3ZF
Manufacturer Oriental Semiconductor
File Size 954.25 KB
Description N-Channel Power MOSFET
Datasheet download datasheet OSG65R050HT3ZF Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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OSG65R050HT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS® Z series is integrated with fast recovery diode (FRD) to minimize reverse recovery time. It is suitable for resonant switching topologies to reach higher efficiency, higher reliability and smaller form factor.