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HE8404SG - GaAlAs Infrared Emitting Diode

Description

The HE8404SG is a GaAlAs double heterojunction structure 820 nm band light emitting diode.

It is suitable for use as the light source in a wide range of optical control and sensing equipment.

Features

  • High efficiency and high output power Package Type.
  • HE8404SG: SG1 Internal Circuit 1 2 www. DataSheet4U. com HE8404SG Absolute Maximum Ratings (TC = 25°C) Item Forward current Reverse voltage Operating temperature Storage temperature Symbol IF VR Topr Tstg Value 250 3.
  • 20 to +60.
  • 40 to +90 Unit mA V °C °C Optical and Electrical Characteristics (TC = 25°C) Item Optical output power Peak wavelength Spectral width Forward voltage Reverse current Capacitance Rise.

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Datasheet Details

Part number HE8404SG
Manufacturer Opnext
File Size 209.31 KB
Description GaAlAs Infrared Emitting Diode
Datasheet download datasheet HE8404SG Datasheet

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Full PDF Text Transcription

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www.DataSheet4U.com HE8404SG GaAlAs Infrared Emitting Diode ODE-208-997B (Z) Rev.2 Mar. 2005 Description The HE8404SG is a GaAlAs double heterojunction structure 820 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment. Features • High efficiency and high output power Package Type • HE8404SG: SG1 Internal Circuit 1 2 www.DataSheet4U.
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