F0118G Description
Einheit Unit nm ∆λ 55 nm tr, tf 0.5/0.4 µs VR 5 V VF 1.4 1.6 V Φe 12 mW Ie 0.65 a.u. Measurement limits describe actual settings and do not include measurement uncertainties. Each wafer and fragment of a wafer is subject to final testing.
F0118G Key Features
- Typ. total radiant power: 24 mW @ 100 mA in TOPLED® package
- Chip size 300 x 300 µm2
- Peak wavelength: 950 nm
- Very highly efficient GaAs LED
- Good linearity (Ie = f [IF]) at high currents
- DC or pulsed operations are possible
- High reliability
- High pulse handling capability
F0118G Applications
- IR remote control for hifi and TV sets, video tape recorder, dimmers
- Remote control for steady and varying intensity