F0118G - GaAs Infrared Emitting Diode

Product Overview

OSRAM

Datasheet Details

Part number	F0118G
Manufacturer	OSRAM
File Size	66.76 KB
Description	GaAs Infrared Emitting Diode
Datasheet	F0118G Datasheet
Additional preview pages of the F0118G datasheet.

Product details

Description

Infrarot emittierender Chip, Oberseite Anodenanschluß, Infrared emitting die, top side anode connection 2003-04-10 1 F 0118G Elektrische Werte (TA = 25 °C) Electrical values1) (TA = 25 °C) Bezeichnung Parameter Emissionswellenlänge Peak wavelength IF = 10 mA Spektrale Bandbreite bei 50% von Imax, Spectral bandwidth at 50% of Imax IF = 10 mA Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10%, bei IF = 100 mA, RL = 50 Ω Switching times, Ie from 10% to 90% and from 90% to 10%, IF = 100 mA, RL

Features

Typ. total radiant power: 24 mW @ 100 mA in TOPLED® package.
Chip size 300 x 300 µm2.
Peak wavelength: 950 nm.
Very highly efficient GaAs LED.
Good linearity (Ie = f [IF]) at high currents.
DC or pulsed operations are possible.
High reliability.
High pulse handling capability.

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Published: Apr 14, 2005 |