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PHOTODIODE Ø5 mm
SXUV20HS1
FEATURES
• Circular active area • Ideal for EUV detection • 100% internal QE • High speed • Grid lines 5 microns,
Pitch 100 microns • RoHS and REACH compliant
RoHS
Dimensions are in inch [metric] units.
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
TEST CONDITIONS
Active Area
Ø5.01mm
Responsivity, R
(see graphs on next page)
Reverse Breakdown Voltage, VR Capacitance, C Rise Time Dark Current
IR = 1µA VR = 0V RL = 50Ω, VR = 150V VR = 150V
MIN 160
TYP 19.7
MAX
200 800 2
100
THERMAL PARAMETERS
STORAGE AND OPERATING TEMPERATURE RANGE
Ambient1 Nitrogen or Vacuum Lead Soldering Temperature2
-10° TO 40°C1 -20°C TO 80°C
260°C
1Temperatures exceeding these parameters may create oxide growth on the active area.
SXUV20HS1 Datasheet
