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SOP8501 - Transistor

Features

  • High breakdown voltage. (VCEO≥400V).
  • Excellent hFE linearlity. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC PT Tj Tstg Electrical Characteristics at Ta=25°C Conditions Mounted on a ceramic board (2000mm2✕0.8mm) 1unit Mounted on a ceramic boar.

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Datasheet Details

Part number SOP8501
Manufacturer onsemi
File Size 101.49 KB
Description Transistor
Datasheet download datasheet SOP8501 Datasheet

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Full PDF Text Transcription

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SOP8501 Ordering number : ENN8007 SOP8501 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features • High breakdown voltage. (VCEO≥400V) • Excellent hFE linearlity. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC PT Tj Tstg Electrical Characteristics at Ta=25°C Conditions Mounted on a ceramic board (2000mm2✕0.8mm) 1unit Mounted on a ceramic board (2000mm2✕0.
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