SMMBD914LT1G Datasheet | onsemi

Features http://onsemi. - AEC- Q101 Qualified and PPAP Capable - S Prefix for Automotive and Other Applications Requiring Unique - Site and Control Change Requirements These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant- 3 CATHODE Symbol VR IF IFM(surge) Value 100 200 500 Unit Vdc m Adc m Adc 1 5D M G SOT- 23 CASE 318 STYLE 8 MAXIMUM RATINGS Rating Reverse Voltage Forward Current Peak Forward Surge Current 1 ANODE MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction- to- Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction- to- Ambient Junction and Storage Temperature Range Symbol PD Max 225 1.8 Rq JA PD 556 300 2.4 Rq JA TJ, Tstg 417 - 55 to +150 Unit m W m W/C C/W m W m W/C C/W C 5D M G G = Device Code = Date Code- = Pb- Free Package (Note: Microdot may be in either location) - Date Code orientation...