Datasheet4U Logo Datasheet4U.com

SFT1458 - N-Channel Power MOSFET

Datasheet Summary

Features

  • On-resistance RDS(on)=10Ω(typ. ).
  • Input Capacitance Ciss=65pF(typ. ).
  • Protection Diode in.
  • 10V drive.
  • Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Conditions Drain to Source Voltage VDSS Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) VGSS ID IDP PW≤10μs, duty cycle≤1% Allowable Power Dissipation Channel Temperature Storage Temperature PD Tch Tstg Tc=25°C Ratings 600 ±30 1.

📥 Download Datasheet

Datasheet preview – SFT1458

Datasheet Details

Part number SFT1458
Manufacturer ON Semiconductor
File Size 369.98 KB
Description N-Channel Power MOSFET
Datasheet download datasheet SFT1458 Datasheet
Additional preview pages of the SFT1458 datasheet.

📁 Similar Datasheet

  • SFT1450 - N-Channel Silicon MOSFET (Sanyo Semicon Device)
  • SFT14 - (SFT11 - SFT18) Super Fast Rectifiers (Taiwan Semiconductor)
  • SFT1402 - N-Channel Silicon MOSFET General-Purpose Switching Device (Sanyo Semicon Device)
  • SFT1403 - N-Channel Silicon MOSFET General-Purpose Switching Device (Sanyo Semicon Device)
  • SFT1405 - N-Channel Silicon MOSFET General-Purpose Switching Device (Sanyo Semicon Device)
  • SFT1407 - N-Channel Silicon MOSFET General-Purpose Switching Device (Sanyo Semicon Device)
  • SFT1423 - General-Purpose Switching Device Applications (Sanyo Semicon Device)
  • SFT1427 - N-Channel Silicon MOSFET General-Purpose Switching Device (Sanyo Semicon Device)
  • SFT1431 - N-Channel Silicon MOSFET (Sanyo Semicon Device)
  • SFT1431-E - N-Channel MOSFET (VBsemi)
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
Ordering number : ENA2207 SFT1458 N-Channel Power MOSFET 600V, 1.0A, 13Ω, Single TP/TP-FA http://onsemi.com Features • On-resistance RDS(on)=10Ω(typ.) • Input Capacitance Ciss=65pF(typ.) • Protection Diode in • 10V drive • Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Conditions Drain to Source Voltage VDSS Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) VGSS ID IDP PW≤10μs, duty cycle≤1% Allowable Power Dissipation Channel Temperature Storage Temperature PD Tch Tstg Tc=25°C Ratings 600 ±30 1 4 1 38 150 - 55 to +150 Unit V V A A W W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.
Published: |