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SFT1452 - N-Channel Power MOSFET

Datasheet Summary

Features

  • ON-resistance RDS(on)=1.8W(typ. ).
  • Halogen free compliance.
  • Input Capacitance Ciss=210pF(typ. ).
  • 10V drive.
  • ESD Diode-Protected Gate Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Power Dissipation PD Junction Temperature Storage Temperature Tj Tstg Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 250 ±30.

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Datasheet Details

Part number SFT1452
Manufacturer ON Semiconductor
File Size 443.26 KB
Description N-Channel Power MOSFET
Datasheet download datasheet SFT1452 Datasheet
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Full PDF Text Transcription

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Ordering number : EN9051B SFT1452 N-Channel Power MOSFET 250V, 3A, 2.4Ω, Single DPAK/IPAK http://onsemi.com Features • ON-resistance RDS(on)=1.8W(typ.) • Halogen free compliance • Input Capacitance Ciss=210pF(typ.) • 10V drive • ESD Diode-Protected Gate Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Power Dissipation PD Junction Temperature Storage Temperature Tj Tstg Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 250 ±30 3 12 1 26 150 --55 to +150 Unit V V A A W W °C °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
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