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SBRA8160T3G - Schottky Power Rectifier

Features

  • epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount.

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Datasheet preview – SBRA8160T3G

Datasheet Details

Part number SBRA8160T3G
Manufacturer ON Semiconductor
File Size 146.54 KB
Description Schottky Power Rectifier
Datasheet download datasheet SBRA8160T3G Datasheet
Additional preview pages of the SBRA8160T3G datasheet.

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Full PDF Text Transcription

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DATA SHEET www.onsemi.com Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package SS16T3G, SBRA8160T3G, SBRA8160NT3G These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount applications where compact size and weight are critical to the system.
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