Datasheet4U Logo Datasheet4U.com

RURG8060-F085 - Ultrafast Rectifier

Datasheet Summary

Description

The RURG8060

characteristics (trr < 90ns).

It has low forward voltage drop and is of silicon nitride passivated ionimplanted epitaxial planar construction.

Features

  • High Speed Switching ( trr = 74 ns (Typ. ) @ IF = 80 A ).
  • Low Forward Voltage( VF = 1.34 V (Typ. ) @ IF = 80 A ).
  • Avalanche Energy Rated.
  • AEC.
  • Q101 Qualified.
  • This Device is Pb.
  • Free.

📥 Download Datasheet

Datasheet preview – RURG8060-F085

Datasheet Details

Part number RURG8060-F085
Manufacturer ON Semiconductor
File Size 2.18 MB
Description Ultrafast Rectifier
Datasheet download datasheet RURG8060-F085 Datasheet
Additional preview pages of the RURG8060-F085 datasheet.

📁 Similar Datasheet

  • RURG8060 - 80A/ 600V Ultrafast Diode (Fairchild Semiconductor)
  • RURG8060 - 80A/ 600V Ultrafast Diode (Intersil Corporation)
  • RURG8060_F085 - Ultrafast Rectifier (Fairchild Semiconductor)
  • RURG80100 - Ultrafast Rectifier (INCHANGE)
  • RURG80100 - Ultrafast Diode (Fairchild Semiconductor)
  • RURG80100 - 80A/ 1000V Ultrafast Diode (Intersil Corporation)
  • RURG15100CC - 15A/ 1000V Ultrafast Dual Diode (Intersil Corporation)
  • RURG15120CC - 15A/ 1200V Ultrafast Dual Diode (Intersil Corporation)
  • RURG1520 - 15A GLASS PASSIVATED SUPERFAST RECTIFIER (WON-TOP)
  • RURG1520CC - 15A/ 200V Ultrafast Dual Diode (Fairchild Semiconductor)
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
Ultrafast Rectifier 80 A, 600 V RURG8060-F085 Description The RURG8060−F085 is an ultrafast diode with soft recovery characteristics (trr < 90ns). It has low forward voltage drop and is of silicon nitride passivated ionimplanted epitaxial planar construction. This device is intended for use as a freewheeling/ clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and ultrafast recovery with soft recovery characteristic minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors. Features • High Speed Switching ( trr = 74 ns (Typ.) @ IF = 80 A ) • Low Forward Voltage( VF = 1.34 V (Typ.
Published: |