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RHRG30120 - Hyperfast Diode

Datasheet Summary

Description

characteristics.

It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction.

Features

  • Hyperfast Recovery trr = 85 ns (@ IF = 30 A).
  • Max Forward Voltage, VF = 3.2 V (@ TC = 25°C).
  • 1200 V Reverse Voltage and High Reliability.
  • Avalanche Energy Rated.
  • This Device is Pb.
  • Free and is RoHS Compliant.

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Datasheet preview – RHRG30120

Datasheet Details

Part number RHRG30120
Manufacturer ON Semiconductor
File Size 278.04 KB
Description Hyperfast Diode
Datasheet download datasheet RHRG30120 Datasheet
Additional preview pages of the RHRG30120 datasheet.

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Full PDF Text Transcription

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Hyperfast Diode 30 A, 1200 V RHRG30120 Description The RHRG30120 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended to be used as freewheeling/clamping diodes and diodes in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Features • Hyperfast Recovery trr = 85 ns (@ IF = 30 A) • Max Forward Voltage, VF = 3.
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