NXH40B120MNQ1SNG - Three Channel Full SiC

Datasheet Summary

Features

1200 V 40 mW SiC MOSFETs.
Low Reverse Recovery and Fast Switching SiC Diodes.
1200 V Bypass and Anti.
parallel Diodes.
Low Inductive Layout.
Solderable Pins.
Thermistor.
This Device is Pb.
Free, Halogen Free/BFR Free and is RoHS Compliant Typical.

ON Semiconductor

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Datasheet Details

Part number	NXH40B120MNQ1SNG
Manufacturer	ON Semiconductor
File Size	923.79 KB
Description	Three Channel Full SiC
Datasheet	NXH40B120MNQ1SNG Datasheet
Additional preview pages of the NXH40B120MNQ1SNG datasheet.

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Silicon Carbide (SiC) Module – EliteSiC, 40 mohm SiC M1 MOSFET, 1200 V + 40 A, 1200 V SiC Diode, Three Channel Full SiC Boost, Q1 Package Product Preview NXH40B120MNQ1SNG The NXH40B120MNQ1SNG is a power module containing a three channel boost stage. The integrated SiC MOSFETs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability. Features • 1200 V 40 mW SiC MOSFETs • Low Reverse Recovery and Fast Switching SiC Diodes • 1200 V Bypass and Anti−parallel Diodes • Low Inductive Layout • Solderable Pins • Thermistor • This Device is Pb−Free, Halogen Free/BFR Free and is RoHS Compliant Typical Applications • Solar Inverters • Uninterruptable Power Supplies DATA SHEET www.onsemi.com PIM32, 71x37.

Published: Apr 2, 2025 |