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Si/SiC Hybrid Modules – EliteSiC, Dual Boost, 1200 V, 50 A IGBT + 1200 V, 20 A SiC Diode, Q0 Package
NXH100B120H3Q0, NXH100B120H3Q0PG-R
The NXH100B120H3Q0 is a power module containing a dual boost stage. The integrated field stop trench IGBTs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.
Features
• 1200 V Ultra Field Stop IGBTs • Low Reverse Recovery and Fast Switching SiC Diodes • 1600 V Bypass and Anti−parallel Diodes • Low Inductive Layout • Solderable Pins or Press−Fit Pins • Thermistor • Options with Pre−Applied Thermal Interface Material (TIM) and
Without Pre−Applied TIM
Typical Applications
• Solar Inverter • Uninterruptible Power Supplies • Energy Storage Systems
DATA SHEET www.onsemi.
NXH100B120H3Q0PG-R Datasheet
