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DATA SHEET www.onsemi.com
MOSFET – Power, Single P-Channel, WDFN8
-30 V
NVTFS012P03P8Z, NVTFWS012P03P8Z
Features
• Small Footprint for Compact Design • Low RDS(on) to Minimize Conduction Losses • AEC−Q101 Qualified • These Devices are Pb−Free, Halogen−Free/BFR−Free and are RoHS
Compliant
Applications
• Battery Management • Protection • Power Load Switch
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
−30
V
Gate−to−Source Voltage
VGS
±25
V
Continuous Drain Current RqJA (Notes 1, 3)
Steady TA = 25°C
ID
−11.7 A
State
TA = 85°C
−8.4
Power Dissipation RqJA (Notes 1, 3)
TA = 25°C
PD
2.40 W
Continuous Drain Current RqJA (Notes 2, 3)
Steady TA = 25°C
ID
State
TA = 85°C
−7.0 A −5.
NVTFWS012P03P8Z Datasheet
