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MOSFET – Power, Single, N-Channel
40 V, 14 mW, 26 A
NVTFS5C478NL
Features
• Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFS5C478NLWF − Wettable Flanks Product
• AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain
Current RqJC (Notes 1, 2, 3, 4)
Steady TC = 25°C
ID
State
TC = 100°C
26
A
18
Power Dissipation RqJC (Notes 1, 2, 3)
TC = 25°C
PD
TC = 100°C
Continuous Drain
Steady TA = 25°C
ID
Current RqJA (Notes 1, 3, 4)
State
TA = 100°C
20
W
10
10
A
8.
NVTFS5C478NL Datasheet
