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NVTFS5124PL
MOSFET – Power, Single P-Channel
-60 V, -6 A, 260 mW
Features
• Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVTFS5124PLWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
−60
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain Cur-
Tmb = 25°C
ID
rent RYJ−mb (Notes 1, 2, 3, 4)
Steady Tmb = 100°C
Power Dissipation
State Tmb = 25°C
PD
RYJ−mb (Notes 1, 2, 3)
Tmb = 100°C
−6.0 A
−4.0
18
W
9.
NVTFS5124PL Datasheet
