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MOSFET – Power, Single P-Channel, m8FL
-30 V, -88.6 A, 7.5 mW
NVTFS015P03P8Z
Features
• Ultra Low RDS(on) to Improve System Efficiency • Advanced Package Technology in 3.3 x 3.3 mm for Space Saving
and Excellent Thermal Conduction
• AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• Power Load Switch • Protection: Reverse Current, Over Voltage, and Reverse Negative
Voltage
• Battery Management
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Parameter
Value Unit
VDSS Drain−to−Source Voltage
−30
V
VGS Gate−to−Source Voltage
"25 V
ID
Continuous Drain Cur- Steady TC = 25°C −88.6 A
rent RqJC (Notes 1, 2)
State TC = 100°C −62.6
PD Power Dissipation RqJC (Notes 1, 2)
TC = 25°C 88.