Click to expand full text
MOSFET - Power, Single N-Channel
60 V, 0.72 mW, 464 A
NVMTS0D7N06C
Features
• Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • Wettable Flank Plated for Enhanced Optical Inspection • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain
Steady TC = 25°C
ID
Current RqJC (Note 2) State TC = 100°C
464
A
328.1
Power Dissipation RqJC (Note 2)
Steady TC = 25°C
PD
State
TC = 100°C
294.6 W 147.
NVMTS0D7N06C Datasheet
