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MOSFET - Power, Single N-Channel
40 V, 0.4 mW, 553.8 A
NVMTS0D4N04CL
Features
• Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• Power Tools, Battery Operated Vacuums • UAV/Drones, Material Handling • BMS/Storage, Home Automation
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain
TC = 25°C
ID
Current RqJC (Note 2) Steady TC = 100°C
ID
Power Dissipation RqJC (Note 2)
State TC = 25°C
PD
TC = 100°C
PD
553.8 A 394.
NVMTS0D4N04CL Datasheet
