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NVMFWS2D3N04XM - N-Channel Power MOSFET

Key Features

  • Low RDS(on) to Minimize Conduction Losses.
  • Low Capacitance to Minimize Driver Losses.
  • Small Footprint (5 x 6 mm) with Compact Design.
  • AECQ101 Qualified and PPAP Capable.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant.

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Full PDF Text Transcription for NVMFWS2D3N04XM (Reference)

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MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 2....

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