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NVMFS5C682NL - N-Channel MOSFET

Features

  • Small Footprint (5x6 mm) for Compact Design.
  • Low RDS(on) to Minimize Conduction Losses.
  • Low QG and Capacitance to Minimize Driver Losses.
  • NVMFS5C682NLWF.
  • Wettable Flank Option for Enhanced Optical Inspection.
  • AEC.
  • Q101 Qualified and PPAP Capable.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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NVMFS5C682NL MOSFET – Power, Single N-Channel 60 V, 21 mW, 25 A Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS5C682NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain C(Nuortreesnt1R, 3qJ)C Power Dissipation RqJC (Note 1) Steady State TC = 25°C TC = 100°C TC = 25°C TC = 100°C Continuous Drain C(Nuortreesnt1R, 2qJ,A3) Power Dissipation RqJA (Notes 1 & 2) Steady State TA = 25°C TA = 100°C TA = 25°C TA = 100°C Pulsed Drain Current T
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