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NVMFD5853NL, NVMFD5853NLWF Power MOSFET
Features
40 V, 10 mW, 34 A, Dual N−Channel Logic Level, Dual SO−8FL
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Small Footprint (5x6 mm) for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVMFD5853NLWF − Wettable Flanks Product AEC−Q101 Qualified and PPAP Capable This is a Pb−Free Device
Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RYJ−mb (Notes 1, 2, 3, 4) Power Dissipation RYJ−mb (Notes 1, 2, 3) Continuous Drain Current RqJA (Notes 1, 3 & 4) Power Dissipation RqJA (Notes 1 & 3) Pulsed Drain Current Tmb = 25°C Steady State Tmb = 100°C Tmb = 25°C Tmb = 100°C TA = 25°C Steady State TA = 100°C TA = 25°C TA = 100°C TA = 25°C, tp = 10 ms IDM TJ, Tstg IS EAS PD ID PD Symbol VDSS VGS ID Value 40 "2
NVMFD5853NLWF Datasheet
