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NVMFD5485NL
MOSFET – Power, Dual N-Channel
60 V, 44 mW, 20 A
Features
• Small Footprint (5x6 mm) for Compact Designs • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • 175°C Operating Temperature • NVMFD5485NLWF − Wettable Flank Option for Enhanced Optical
Inspection
• AEC−Q101 Qualified and PPAP Capable • This is a Pb−Free Device
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage
VGS
"20 V
Continuous Drain Current RqJC (Notes 1, 2, 4)
Power Dissipation RqJC (Notes 1, 2)
TC = 25°C
ID
Steady TC = 100°C
State TC = 25°C
PD
TC = 100°C
19.5 A 13.8 38.5 W 19.
NVMFD5485NL Datasheet
